The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2016
Filed:
Jul. 15, 2015
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Koji Okuno, Kiyosu, JP;
TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;
Abstract
The present invention provides a Group III nitride semiconductor light-emitting device having a low drive voltage and a production method therefor. A p-type semiconductor layer formation step comprises a p-type cladding layer formation step of forming a p-side superlattice layer on a light-emitting layer by supplying a first raw material gas containing at least a Group III element and a dopant gas, a p-type intermediate layer formation step of forming a p-type intermediate layer on the p-side superlattice layer by supplying a first raw material gas and a dopant gas, a dopant gas supply step of supplying the dopant gas while stopping the supply of the first raw material gas after the p-type intermediate layer formation step, and a p-type contact layer formation step of forming a p-type contact layer on the p-type intermediate layer by supplying a first raw material gas and a dopant gas after the dopant gas supply step.