The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2016

Filed:

Jan. 27, 2015
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Il-Han Park, Suwon-Si, KR;

Su-Yong Kim, Hwaseong-Si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 7/10 (2006.01); G11C 16/08 (2006.01); G11C 11/56 (2006.01); G11C 16/12 (2006.01);
U.S. Cl.
CPC ...
G11C 16/08 (2013.01); G11C 11/5628 (2013.01); G11C 16/12 (2013.01);
Abstract

A non-volatile memory device includes a first word line, a second word line, first memory cells, second memory cells, and an address decoder. The second word line is adjacent to the first word line. The first memory cells are connected to the first word line. The second memory cells are connected to the second word line. The second memory cells are connected to the first memory cells, respectively. The address decoder applies a first voltage to the first word line and applies a second voltage to the second word line in an over program period of the first memory cells. The first voltage is higher than a program voltage of the first and second memory cells. The second voltage is lower than a pass voltage of the first and second memory cells.


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