The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2016
Filed:
Jul. 28, 2014
Applicant:
SK Hynix Inc., Icheon-Si, KR;
Inventors:
Assignee:
SK hynix Inc., Icheon-Si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 11/16 (2006.01); G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 11/165 (2013.01); G11C 11/1655 (2013.01); G11C 11/1657 (2013.01); G11C 11/1673 (2013.01); G11C 11/2259 (2013.01); G11C 13/0002 (2013.01); G11C 13/003 (2013.01); G11C 13/0023 (2013.01); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); G11C 13/0069 (2013.01); G11C 2013/0073 (2013.01); G11C 2213/74 (2013.01); G11C 2213/79 (2013.01);
Abstract
Provided is an electronic device including a semiconductor memory unit. The semiconductor memory unit may include: a storage cell comprising a variable resistance element; a first selecting element coupled to one end of the storage cell and having a threshold voltage set to a first voltage; and a second selecting element coupled to the other end of the storage cell and having a threshold voltage set to a second voltage higher than the first voltage.