The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2016

Filed:

Dec. 15, 2014
Applicant:

Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;

Inventor:

Masaki Aoki, Kawasaki, JP;

Assignee:

FUJITSU LIMITED, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/16 (2006.01); G11C 11/15 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1673 (2013.01); G11C 11/1697 (2013.01); G11C 11/15 (2013.01);
Abstract

A semiconductor memory device includes a memory cell, a reference cell, a first current source configured to cause a first current to flow through the memory cell, a second current source configured to cause a second current having an amount thereof being variable to flow through the reference cell, a sense amplifier configured to compare a voltage responsive to a voltage drop across the memory cell with a voltage responsive to a voltage drop across the reference cell, and a current-amount setting circuit configured to determine the amount of the second current, wherein the current-amount setting circuit determines the amount of the second current such that the voltage drop across the reference cell is equal to a midpoint between the voltage drop across the memory cell having a data value of '0' stored therein and the voltage drop across the memory cell having a data value of '1' stored therein.


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