The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2016

Filed:

Apr. 22, 2015
Applicants:

Qualcomm Incorporated, San Diego, CA (US);

Industry-academic Cooperation Foundation, Yonsei University, Seoul, KR;

Inventors:

Seong-Ook Jung, Seoul, KR;

Taehui Na, Seoul, KR;

Jisu Kim, Seoul, KR;

Jung Pill Kim, San Diego, CA (US);

Seung Hyuk Kang, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 7/08 (2006.01); G11C 7/10 (2006.01); G11C 7/22 (2006.01);
U.S. Cl.
CPC ...
G11C 7/08 (2013.01); G11C 7/10 (2013.01); G11C 7/1051 (2013.01); G11C 7/22 (2013.01);
Abstract

A read circuit for a memory cell may include an integrated logic circuit for sensing a current change. The integrated logic sensing circuit may be an offset cancelling single ended integrated logic sensing circuit. The circuit may include an offset canceling single ended sensing circuit coupled to a supply voltage, an offset canceling single ended sense amplifier circuit having a sense amplifier input coupled to the offset canceling single ended sensing circuit and a sense amplifier output, and a cell array coupled to a sensing circuit output and a ground.


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