The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2016

Filed:

May. 15, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Jung Sunwoo, Seoul, KR;

Kwang-Jin Lee, Hwaseong-Si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); G06F 11/10 (2006.01); G11C 29/02 (2006.01); G11C 11/16 (2006.01); G11C 13/00 (2006.01); G11C 16/26 (2006.01); G11C 29/04 (2006.01);
U.S. Cl.
CPC ...
G06F 11/10 (2013.01); G11C 11/1673 (2013.01); G11C 13/0004 (2013.01); G11C 13/004 (2013.01); G11C 16/26 (2013.01); G11C 29/021 (2013.01); G11C 29/028 (2013.01); G11C 2013/0054 (2013.01); G11C 2013/0057 (2013.01); G11C 2029/0409 (2013.01); G11C 2029/0411 (2013.01);
Abstract

A method of operating a nonvolatile memory device comprises applying a read current with a first level to a nonvolatile memory cell comprising a variable resistance material, determining read data based on the applied read current, checking a syndrome corresponding to the read data to determine whether the read data is pass or fail, changing the read current from the first level to a second level, which is different from the first level, according to the determination of whether the read data is pass or fail, and performing a read-retry operation comprising applying the read current of the second level to the nonvolatile memory cell.


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