The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2016

Filed:

Nov. 05, 2014
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Neng Jiang, Plano, TX (US);

Joel Soman, Dallas, TX (US);

Thomas Warren Lassiter, Garland, TX (US);

Mary Alyssa Drummond Roby, Plano, TX (US);

Nayeemuddin Mohammed, Plano, TX (US);

YungShan Chang, Plano, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02B 7/09 (2006.01); H01L 21/3213 (2006.01); H04N 5/232 (2006.01); C23F 1/00 (2006.01); C23F 4/00 (2006.01);
U.S. Cl.
CPC ...
G02B 7/09 (2013.01); C23F 1/00 (2013.01); C23F 4/00 (2013.01); H01L 21/32136 (2013.01); H01L 21/32139 (2013.01); H04N 5/232 (2013.01); H04N 5/23229 (2013.01);
Abstract

A method includes placing a device having a titanium nitride layer into a chamber. The device also has a mask that includes a photoresist material and an aluminum copper hardmask. The method also includes performing an ashing process on the mask using the chamber. The method further includes, after the ashing process, performing an etching process using the chamber to etch through portions of the titanium nitride layer. Performing the etching process includes flowing a gas mixture containing tetrafluoromethane (CF) and oxygen gas (O) into the chamber at a temperature of at least about 200° C.


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