The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2016
Filed:
Aug. 23, 2012
Masahiro Hayashi, Miyagi, JP;
Seiji Sarayama, Miyagi, JP;
Takashi Satoh, Miyagi, JP;
Hiroshi Nambu, Kanagawa, JP;
Chiharu Kimura, Miyagi, JP;
Naoya Miyoshi, Miyagi, JP;
Masahiro Hayashi, Miyagi, JP;
Seiji Sarayama, Miyagi, JP;
Takashi Satoh, Miyagi, JP;
Hiroshi Nambu, Kanagawa, JP;
Chiharu Kimura, Miyagi, JP;
Naoya Miyoshi, Miyagi, JP;
RICOH COMPANY, LTD., Tokyo, JP;
Abstract
A method of manufacturing a group 13 nitride crystal includes a crystal growth process to form the group 13 nitride crystal by growing the group 13 nitride crystal having a hexagonal crystal structure from a seed crystal which is a gallium nitride crystal having a hexagonal crystal structure in which a length 'L' in a c-axis direction is 9.7 mm or more, and a ratio L/d of the length 'L' to a crystal diameter “d” in a c-plane is larger than 0.813. The crystal growth process includes a process of forming an outer periphery containing a {10-10} plane and an outer periphery containing a {10-11} plane at side surfaces of the group 13 nitride crystal, and forming an outer periphery containing a {0001} plane at a bottom surface of the group 13 nitride crystal.