The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2016

Filed:

Jul. 21, 2015
Applicant:

Sensor Electronic Technology, Inc., Columbia, SC (US);

Inventors:

Igor Agafonov, Columbia, SC (US);

Michael Shur, Latham, NY (US);

Alexander Dobrinsky, Loudonville, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/52 (2006.01); H01L 21/02 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45565 (2013.01); C23C 16/4584 (2013.01); C23C 16/45563 (2013.01); C23C 16/52 (2013.01); H01L 22/26 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 22/12 (2013.01);
Abstract

A solution for manufacturing semiconductors is provided. An embodiment provides a chemical vapor deposition reactor, which includes a chemical vapor deposition chamber. A substrate holder located in the chemical vapor deposition chamber can be rotated about its own axis at a first angular speed, and a gas injection component located in the chemical vapor deposition chamber can be rotated about an axis of the gas injection component at a second angular speed. The angular speeds are independently selectable and can be configured to cause each point on a surface of a substrate wafer to travel in an epicyclical trajectory within a gas flow injected by the gas injection component. An angle between the substrate holder axis and the gas injection component axis and/or a distance between the substrate holder axis and the gas injection component axis can be controlled variables.


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