The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2016

Filed:

Sep. 18, 2014
Applicants:

Igor Ivanovich Blednov, Toulouse, FR;

Jeffrey K. Jones, Chandler, AZ (US);

Youri Volokhine, Stevensbeek, NL;

Inventors:

Igor Ivanovich Blednov, Toulouse, FR;

Jeffrey K. Jones, Chandler, AZ (US);

Youri Volokhine, Stevensbeek, NL;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/10 (2006.01); H03F 3/195 (2006.01); H03F 3/213 (2006.01); H01L 23/66 (2006.01); H03F 1/08 (2006.01); H03F 1/30 (2006.01); H03F 3/24 (2006.01);
U.S. Cl.
CPC ...
H03F 3/195 (2013.01); H01L 23/66 (2013.01); H03F 1/086 (2013.01); H03F 1/301 (2013.01); H03F 3/213 (2013.01); H03F 3/245 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/49175 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/19107 (2013.01); H03F 2200/447 (2013.01); H03F 2200/451 (2013.01);
Abstract

A RF power amplifier module comprises a die with a RF power transistor and the RF power transistor comprises a control terminal, a transistor output terminal and a transistor reference terminal. The RF power amplifier module further comprises a module input terminal, a module output terminal and at least two module reference terminals being electrically coupled to the control terminal, the transistor output terminal and the transistor reference terminal, respectively. The RF power amplifier module further comprises an electrically isolating layer and a heat conducting element. The die is in thermal contact with the heat conducting element via the electrically isolating layer in order to transfer heat during operation of the RF power transistor to the heat conducting element.


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