The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2016

Filed:

Nov. 12, 2013
Applicants:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Industry-academic Cooperation Foundation, Yonsei University, Seoul, KR;

Inventors:

Jung-kyun Im, Yongin-si, KR;

Jong-jin Park, Hwaseong-si, KR;

Min-woo Park, Seoul, KR;

Min-kwan Shin, Seoul, KR;

Un-yong Jeong, Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01); H01L 51/05 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0566 (2013.01); H01L 51/0094 (2013.01); H01L 51/0097 (2013.01);
Abstract

Provided are a material for forming a channel layer for a stretchable TFT, a method of preparing a channel layer for a stretchable TFT, a channel layer for a stretchable TFT, and a stretchable TFT. The material for forming the channel layer for the stretchable TFT includes an elastomer, an organic semiconductor material and a solvent. By mixing an elastomer and an organic semiconductor material and forming a thin film, a channel layer having an excellent conductivity and stretchability may be obtained.


Find Patent Forward Citations

Im, Jung-kyun. (2016). Channel layer for stretchable transistors (U.S. Patent No. 9401487). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9401487

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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