The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2016
Filed:
Aug. 25, 2014
Commissariat a L'energie Atomique ET Aux Ene Alt, Paris, FR;
Ivan-Christophe Robin, Grenoble, FR;
Alexei Tchelnokov, Meylan, FR;
Abstract
The invention relates to a semiconducting structure intended to emit light, comprising a first semiconducting region () with a first type of conductivity, and a second semiconducting region () with a second type of conductivity, at least on a portion (), so as to form a junction semiconducting with the first region (). This second region () has at least a first portion () in contact with the first region (), this first portion () comprising at least one first and one second carrier confinement zone (). The structure () comprises at least a first means of polarizing the first portion () adapted to apply direct first external polarization to the first portion () in order to modify the distribution of carriers of at least one type of conductivity in the first portion () relative to the first and second confinement zones (). The invention also relates to a method of manufacturing a semiconducting structure () and a device comprising at least such a structure ().