The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2016

Filed:

Mar. 10, 2015
Applicant:

Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;

Inventors:

Kenichi Kawaguchi, Ebina, JP;

Yoshiaki Nakata, Isehara, JP;

Assignee:

FUJITSU LIMITED, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 31/18 (2006.01); B82Y 20/00 (2011.01); H01L 31/0304 (2006.01); H01L 31/0735 (2012.01);
U.S. Cl.
CPC ...
H01L 31/035236 (2013.01); B82Y 20/00 (2013.01); H01L 31/03046 (2013.01); H01L 31/03529 (2013.01); H01L 31/035281 (2013.01); H01L 31/0735 (2013.01); H01L 31/184 (2013.01); H01L 31/1844 (2013.01); Y02E 10/544 (2013.01); Y02P 70/521 (2015.11);
Abstract

A solar cell includes a semiconductor substrate of a first conductivity; a pillar-shaped structure constituted by a semiconductor of the first conductivity, the pillar-shaped structure being formed on the semiconductor substrate; a superlattice layer including a barrier layer and a quantum structure layer that are alternately deposited on a side wall of the pillar-shaped structure, the quantum structure layer being constituted by a material having a smaller energy bandgap than that of the barrier layer, the quantum structure layer including a wurtzite type crystal part and a zinc blend type crystal part that are alternately arranged along an axial direction of the pillar-shaped structure; and a semiconductor layer of a second conductivity that is formed so as to surround the superlattice layer, the second conductivity being an opposite conductivity to that of the first conductivity.


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