The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2016
Filed:
Jun. 12, 2015
Eastman Kodak Company, Rochester, NY (US);
Carolyn Rae Ellinger, Rochester, NY (US);
Shelby Forrester Nelson, Pittsford, NY (US);
EASTMAN KODAK COMPANY, Rochester, NY (US);
Abstract
An electronic device includes a vertical-support-element on a substrate. The vertical-support-element extends away from the substrate and includes a first edge having a first reentrant profile. A conformal semiconductor layer is in contact with the vertical-support-element in the reentrant profile. A first electrode is in contact with a first portion of the semiconductor layer and is located over a top of the vertical-support-element. A second electrode is in contact with a second portion of the semiconductor layer and is located over the substrate and not over the vertical-support-element. The second electrode is adjacent to the first edge of the vertical-support-element. A conformal dielectric layer is on the conformal semiconductor layer in the reentrant profile. A conformal conductive gate is on the conformal dielectric layer in the first reentrant profile. The first electrode and the second electrode define a semiconductor channel of a transistor.