The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2016

Filed:

Mar. 13, 2015
Applicant:

Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;

Inventors:

Hidemoto Tomita, Toyota, JP;

Masakazu Kanechika, Nagakute, JP;

Hiroyuki Ueda, Nagakute, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 31/0256 (2006.01); H01L 29/778 (2006.01); H01L 29/43 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 29/432 (2013.01); H01L 29/66462 (2013.01); H01L 29/7781 (2013.01); H01L 29/1066 (2013.01); H01L 29/2003 (2013.01);
Abstract

A switching device provided herewith includes first to fourth semiconductor layers and a gate electrode. The second semiconductor layer is of a first conductive type or an un-dope type and located on the first semiconductor layer. A hetero junction is formed between the first and the second semiconductor layers. The third semiconductor layer is of a second conductive type and located on the second semiconductor layer. The fourth semiconductor layer is of a second conductive type and located on the third semiconductor layer. A hetero junction is formed between the third and the fourth semiconductor layers. The gate electrode electrically connected to the fourth semiconductor layer.


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