The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2016

Filed:

Apr. 12, 2012
Applicants:

Tomoyuki Sasaki, Tokyo, JP;

Tohru Oikawa, Tokyo, JP;

Inventors:

Tomoyuki Sasaki, Tokyo, JP;

Tohru Oikawa, Tokyo, JP;

Assignee:

TDK CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/88 (2006.01); H01L 27/108 (2006.01); H01L 29/66 (2006.01); H01L 29/82 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66984 (2013.01); H01L 29/82 (2013.01); H01L 29/0657 (2013.01);
Abstract

A spin transport device includes a semiconductor layer, a first ferromagnetic layerprovided on the semiconductor layervia a first tunnel barrier layerA, and a second ferromagnetic layerprovided on the semiconductor layervia a second tunnel barrier layerB to be spaced from the first ferromagnetic layer, and the semiconductor layerincludes a first region RI broadening in a direction away from the first ferromagnetic layeralong a direction orthogonal to a thickness direction from the first ferromagnetic layer, and a second region Rextending in a direction toward the second ferromagnetic layeralong the direction orthogonal to the thickness direction from the first ferromagnetic layer. The second region Rhas a relatively higher impurity concentration than the first region R


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