The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2016
Filed:
Apr. 29, 2014
Applicant:
Lg Innotek Co., Ltd., Seoul, KR;
Inventor:
Jung Hun Jang, Seoul, KR;
Assignee:
LG INNOTEK CO., LTD., Seoul, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 29/267 (2006.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01); H01L 33/32 (2010.01); H01L 29/778 (2006.01); H01L 29/15 (2006.01);
U.S. Cl.
CPC ...
H01L 29/267 (2013.01); H01L 21/0237 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02447 (2013.01); H01L 21/02458 (2013.01); H01L 21/02463 (2013.01); H01L 21/02494 (2013.01); H01L 21/02507 (2013.01); H01L 21/02661 (2013.01); H01L 29/155 (2013.01); H01L 29/7783 (2013.01); H01L 33/007 (2013.01); H01L 33/12 (2013.01); H01L 33/32 (2013.01);
Abstract
A semiconductor device includes a silicon substrate, an initial buffer layer disposed on the silicon substrate and including aluminum nitride (AlN), and a semiconductor device layer disposed on the initial buffer layer and including a semiconductor compound. There is no SiN between the initial buffer layer and the silicon substrate, and a silicon lattice of the silicon substrate directly contacts a lattice of the initial buffer layer.