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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9401404 B1

PDFFull Text
Date of Patent:
Jul. 26, 2016

Filed:

Feb. 24, 2012

Semiconductor device and fabrication method

Applicants:

Huiyun Liu, London, GB;

Alwyn John Seeds, London, GB;

Francesca Pozzi, London, GB;

Inventors:

Huiyun Liu, London, GB;

Alwyn John Seeds, London, GB;

Francesca Pozzi, London, GB;

Assignee:

UCL BUSINESS PLC, London, GB;

Attorneys:

Kenneth H. Sonnenfeld

King & Spalding LLP

Primary Examiner:

Tuan Nguyen

Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01L 29/267 (2006.01); H01L 21/02 (2006.01); H01S 5/02 (2006.01); H01S 5/34 (2006.01); H01S 5/30 (2006.01); H01S 5/062 (2006.01); H01S 5/20 (2006.01); H01S 5/22 (2006.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 29/267 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02463 (2013.01); H01L 21/02491 (2013.01); H01L 21/02499 (2013.01); H01L 21/02505 (2013.01); H01L 21/02546 (2013.01); H01L 21/02631 (2013.01); H01S 5/0218 (2013.01); H01S 5/3013 (2013.01); H01S 5/3412 (2013.01); B82Y 40/00 (2013.01); H01S 5/0014 (2013.01); H01S 5/06216 (2013.01); H01S 5/2036 (2013.01); H01S 5/22 (2013.01); H01S 2301/173 (2013.01);
Abstract

A semiconductor device is disclosed comprising: a substrate having a surface comprising germanium; a layer of gallium on said surface; and a layer of gallium arsenide on the gallium covered surface. The semiconductor heterostructure of gallium arsenide on germanium is fabricated by the steps of: protecting by a shutter a surface comprising germanium in an environment having a partial pressure of arsenic less than 10torr; epitaxially growing a layer of gallium on the said surface immediately after exposure of said surface; and epitaxially growing a layer of gallium arsenide on the gallium covered surface.

Find Patent Forward Citations

Liu, Huiyun. (2016). Semiconductor device and fabrication method (U.S. Patent No. 9401404). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9401404

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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