The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2016
Filed:
Feb. 24, 2012
Applicants:
Huiyun Liu, London, GB;
Alwyn John Seeds, London, GB;
Francesca Pozzi, London, GB;
Inventors:
Assignee:
UCL BUSINESS PLC, London, GB;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01L 29/267 (2006.01); H01L 21/02 (2006.01); H01S 5/02 (2006.01); H01S 5/34 (2006.01); H01S 5/30 (2006.01); H01S 5/062 (2006.01); H01S 5/20 (2006.01); H01S 5/22 (2006.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 29/267 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02463 (2013.01); H01L 21/02491 (2013.01); H01L 21/02499 (2013.01); H01L 21/02505 (2013.01); H01L 21/02546 (2013.01); H01L 21/02631 (2013.01); H01S 5/0218 (2013.01); H01S 5/3013 (2013.01); H01S 5/3412 (2013.01); B82Y 40/00 (2013.01); H01S 5/0014 (2013.01); H01S 5/06216 (2013.01); H01S 5/2036 (2013.01); H01S 5/22 (2013.01); H01S 2301/173 (2013.01);
Abstract
A semiconductor device is disclosed comprising: a substrate having a surface comprising germanium; a layer of gallium on said surface; and a layer of gallium arsenide on the gallium covered surface. The semiconductor heterostructure of gallium arsenide on germanium is fabricated by the steps of: protecting by a shutter a surface comprising germanium in an environment having a partial pressure of arsenic less than 10torr; epitaxially growing a layer of gallium on the said surface immediately after exposure of said surface; and epitaxially growing a layer of gallium arsenide on the gallium covered surface.