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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9401403 B1

PDFFull Text
Date of Patent:
Jul. 26, 2016

Filed:

Mar. 02, 2015

Nitride semiconductor structure

Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Hidekazu Umeda, Osaka, JP;

Masahiro Ishida, Osaka, JP;

Tetsuzo Ueda, Osaka, JP;

Daisuke Ueda, Osaka, JP;

Assignee:

PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD., Osaka, JP;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Jarrett Stark

Assistant Examiner:

Bitew Dinke

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 29/205 (2006.01); H01L 29/778 (2006.01); H01L 29/86 (2006.01); H01L 29/15 (2006.01); H01L 29/20 (2006.01); H01L 29/36 (2006.01);
U.S. Cl.
CPC ...
H01L 29/205 (2013.01); H01L 21/0254 (2013.01); H01L 21/02381 (2013.01); H01L 21/02458 (2013.01); H01L 21/02507 (2013.01); H01L 29/155 (2013.01); H01L 29/2003 (2013.01); H01L 29/36 (2013.01); H01L 29/7786 (2013.01); H01L 29/86 (2013.01);
Abstract

A nitride semiconductor structure of the present disclosure comprises a semiconductor substrate, and a layer formed over the semiconductor substrate and comprising plural nitride semiconductor layers. The semiconductor substrate has, from a side thereof near the layer comprising the plural nitride semiconductor layers, a surface region and an internal region in this order. The surface region has a resistivity of 0.1 Ωcm or more, and the internal region has a resistivity of 1000 Ωcm or more.

Find Patent Forward Citations

Umeda, Hidekazu. (2016). Nitride semiconductor structure (U.S. Patent No. 9401403). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9401403

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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