The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2016

Filed:

Mar. 05, 2015
Applicants:

Boyoung Seo, Suwon-si, KR;

Yongkyu Lee, Gwacheon-si, KR;

Keemoon Chun, Seongnam-si, KR;

Inventors:

Boyoung Seo, Suwon-si, KR;

Yongkyu Lee, Gwacheon-si, KR;

Keemoon Chun, Seongnam-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/82 (2006.01); H01L 27/22 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); G11C 11/161 (2013.01); G11C 11/1675 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01);
Abstract

The inventive concepts provide a semiconductor memory device including variable resistance memory elements. The semiconductor memory device may include a first bit line disposed at a first height from a semiconductor substrate, a second bit line disposed at a second height, which is different from the first height, from the semiconductor substrate, a first variable resistance memory element connected to the first bit line, and a second variable resistance memory element connected to the second bit line. The first and second variable resistance memory elements may be disposed at substantially the same height from the semiconductor substrate.


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