The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2016
Filed:
Jun. 19, 2014
Everdisplay Optronics (Shanghai) Limited, Shanghai, CN;
Chia-Che Hsu, Shanghai, CN;
Chia-Chi Huang, Shanghai, CN;
Wei-Ting Chen, Shanghai, CN;
Min-Ching Hsu, Shanghai, CN;
EverDisplay Optronics (Shanghai) Limited, Shanghai, CN;
Abstract
The present application provides a thin film transistor, an active matrix organic light emitting diode assembly and a method for manufacturing the same. The thin film transistor includes: a substrate; a buffer layer on the substrate; a semiconductor layer on the buffer layer, including a source region, a drain region and a channel region; a first gate insulating layer covering the semiconductor layer; a second gate insulating layer foot on the first gate insulating layer, a width of the second gate insulating layer foot being smaller than a width of the first gate insulating layer; and a gate electrode on the second gate insulating layer foot; wherein a part of the first gate insulating layer that is on the semiconductor layer has a flat upper surface. The present application may obtain better implantation profiles of source region and drain region, thereby obtaining better uniformity in TFT performance.