The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2016

Filed:

Jan. 30, 2015
Applicant:

Stmicroelectronics S.a., Montrouge, FR;

Inventors:

Jean Jimenez, Saint Theoffrey, FR;

Boris Heitz, Grenoble, FR;

Johan Bourgeat, Saint Pierre d'allev, FR;

Agustin Monroy Aguirre, St Martin d'Heres, FR;

Assignee:

STMicroelectronics SA, Montrouge, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 27/02 (2006.01); H01L 27/12 (2006.01); H01L 27/102 (2006.01); H01L 29/74 (2006.01); H01L 29/87 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0262 (2013.01); H01L 27/1027 (2013.01); H01L 27/1203 (2013.01); H01L 29/7436 (2013.01); H01L 29/87 (2013.01); H01L 2924/1301 (2013.01);
Abstract

An electronic device includes a thyristor having an anode, a cathode, a first bipolar transistor disposed on the anode side. A second bipolar transistor is disposed on the cathode side. These two bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is coupled between the collector region and the emitter region of the second bipolar transistor. The transistor has a gate region connected to the cathode via a resistive semiconductor region incorporating at least a part of the base region of the second bipolar transistor.


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