The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2016

Filed:

Jun. 19, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Young Jeong Yoon, Suwon-si, KR;

Yeon Woo Lee, Seoul, KR;

Sung Min Jang, Anyang-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/46 (2010.01); H01L 25/075 (2006.01); H05K 1/02 (2006.01); H05K 1/18 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0753 (2013.01); H05K 1/0204 (2013.01); H05K 1/189 (2013.01); H01L 2924/0002 (2013.01); H05K 2201/066 (2013.01); H05K 2201/10106 (2013.01);
Abstract

There is provided a semiconductor light emitting device including: a heat dissipation structure including one or more of materials among a metal, a ceramic, a semiconductor, and a resin; a flexible insulating layer directly in contact with the heat dissipation structure; a conductive layer laminated on the flexible insulating layer; and a light emitting device mounted on the conductive layer, wherein the light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; and first and second electrodes connected to the first and second conductivity-type semiconductor layers, respectively, and the first electrode includes a plurality of conductive vias connected to the first conductivity-type semiconductor layer through the second conductivity-type semiconductor layer and the active layer.


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