The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2016

Filed:

Sep. 25, 2015
Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventors:

Andrea Paleari, Brugherio, IT;

Lorenzo Gola, Cusago, IT;

Federica Ronchi, Bellusco, IT;

Sonia Pirotta, Monza Brianza, IT;

Assignee:

STMICROELECTRONICS S.R.L., Agrate Brianza, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 21/288 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 21/2855 (2013.01); H01L 21/2885 (2013.01); H01L 21/28556 (2013.01); H01L 21/76804 (2013.01); H01L 21/76846 (2013.01); H01L 21/76873 (2013.01); H01L 21/76877 (2013.01); H01L 23/5283 (2013.01);
Abstract

An electric contact structure includes a first structural layer; a second structural layer made of dielectric material extending over the first structural layer; and an intermediate layer made of conductive material extending between the first structural layer and the second structural layer. A trench extends in the second structural layer delimited laterally by a wall of the second structural layer and at the bottom by a surface region of the intermediate layer. A diffusion barrier extends in the trench covering the surface region of the intermediate layer and the wall of the second structural layer. The diffusion barrier is a TiW—TiN—TiW tri-layer.


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