The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2016
Filed:
Apr. 01, 2014
Mitsubishi Electric Corporation, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
A method of testing a semiconductor device having a substrate in and on which a cell structure and a termination structure are formed, the cell structure having a main current flowing therethrough, the termination structure surrounding the cell structure, the method includes a first test step of testing dielectric strength of the semiconductor device, a charge removal step of, after the first test step, removing charge from a top surface layer of the termination structure, the top surface layer being located on the substrate and formed of an insulating film or a semi-insulating film, and a second test step of, after the charge removal step, testing dielectric strength of the semiconductor device.