The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2016

Filed:

Feb. 20, 2015
Applicant:

Mitsubishi Gas Chemical Company, Inc., Chiyoda-ku, JP;

Inventors:

Keiichi Tanaka, Tokyo, JP;

Priangga Perdana Putra, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/48 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76846 (2013.01); H01L 21/76867 (2013.01); H01L 21/76874 (2013.01); H01L 23/481 (2013.01); H01L 23/53238 (2013.01); H01L 25/0655 (2013.01); H01L 2221/1084 (2013.01);
Abstract

The present invention provides a method for forming a through-via, including the steps of (1) forming an alloy film as a diffusion-preventive layer that prevents diffusion of copper, in an area on a side wall of a hole formed in a substrate that extends from an entrance of the hole to a central part of the hole, by use of an electroless cobalt plating solution or an electroless nickel plating solution containing at least cobalt ion or nickel ion, a complexing agent, a reductant, and a pH adjusting agent; (2) forming an alloy film as a diffusion-preventive layer in an area on the side wall of the hole formed in the substrate that extends from the central part of the hole to a bottom of the hole, by use of an electroless cobalt plating solution or an electroless nickel plating solution containing at least the cobalt ion or the nickel ion, the complexing agent, the reductant, the pH adjusting agent, and an amino group-containing polymer; and (3) stacking a copper seed layer on the diffusion-preventive layer formed in each of steps (1) and (2) by use of an electroless copper plating solution.


Find Patent Forward Citations

Tanaka, Keiichi. (2016). Method forming through-via using electroless plating solution (U.S. Patent No. 9401307). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9401307

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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