The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2016

Filed:

Dec. 12, 2014
Applicant:

Freescale Semiconductor, Inc., Austin, TX (US);

Inventors:

Anirban Roy, Austin, TX (US);

Frank K. Baker, Jr., Austin, TX (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 14/00 (2006.01); G11C 5/10 (2006.01); G11C 11/419 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 14/009 (2013.01); G11C 5/10 (2013.01); G11C 11/419 (2013.01); G11C 13/0069 (2013.01);
Abstract

A memory device includes a first select transistor having a first current electrode coupled to a first bit line, a control electrode and a second current electrode. A second select transistor has a first current electrode coupled to a second bit line, a control electrode and a second current electrode. A first bi-directional resistive element has a cathode coupled to the second current electrode of the first select transistor and an anode coupled to an internal node. A second bi-directional resistive element has a cathode coupled to the internal node and an anode coupled to the second current electrode of the second select transistor. A third transistor has a first current electrode coupled to a third bit line, a second current electrode coupled to the internal node, and a control electrode coupled to a word line.


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