The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2016
Filed:
Mar. 26, 2015
Samsung Electronics Co., Ltd., Suwon-si, KR;
Alexander Viacheslavovich Shcherbakov, Moscow region, RU;
Maxim Vladimirovich Riabko, Moscow region, RU;
Alexey Dmitrievich Lantsov, Moscow region, RU;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
Provided are a method and device for measuring a critical dimension of a nanostructure. The method includes acquiring a reference intensity distribution, in each of a number of spectral bands, of light scattered by at least one reference nanostructure, for each of a number at different positions of the at least one reference nano structure disposed along an optical axis; generating a library of reference intensity distribution arrays based on a number of the reference intensity distributions, determining an intensity distribution of light scattered by a nanostructure under investigation, for each of the number of spectral bands, at each of the number of different positions of the nanostructure under investigation disposed along the optical axis; generating an intensity distribution array by using the determined intensity distributions, and determining information about a critical dimension of the nanostructure under investigation by comparing the intensity distribution array with the library of reference intensity distribution arrays.