The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2016

Filed:

May. 30, 2013
Applicant:

The Royal Institution for the Advancement of Learning/mcgill University, Montreal, CA;

Inventors:

Guillaume Gervais, Montreal, CA;

Thomas Szkopek, Outremont, CA;

Jonathan Guillemette, Outremont, CA;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
F25B 21/00 (2006.01); H01L 23/38 (2006.01); H01L 35/28 (2006.01); H01L 23/373 (2006.01); H01L 23/34 (2006.01);
U.S. Cl.
CPC ...
F25B 21/00 (2013.01); H01L 23/34 (2013.01); H01L 23/3738 (2013.01); H01L 23/38 (2013.01); H01L 35/28 (2013.01); F25B 2321/002 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Cryogenic electronics based upon semiconductive devices, superconductive devices, or a combination of the two present opportunities for a wide variety of novel, fast, and low power devices. However, such cryogenic electronics require cooling which is typically achieved through fluid refrigerants such as liquid nitrogen or liquid helium. Solid state refrigeration based upon adiabatic demagnetization in paramagnetic salts offers one alternative but requires that the solid state cooler and cryogenic electronic circuits be different physical elements. The inventors present solid state cooling for semiconductor materials including but not limited to silicon. Beneficially active electronic devices can be integrated monolithically with solid state semiconductor coolers exhibiting magnetic cooling within the whole substrate or predetermined regions of the substrate. Alternatively, active devices may be formed with semiconductor layers integral to them that exhibit magnetic cooling.


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