The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2016
Filed:
Oct. 30, 2014
Applicant:
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Inventor:
Yuta Tamai, Matsumoto, JP;
Assignee:
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); B23K 26/22 (2006.01); H01L 23/00 (2006.01); B23K 26/32 (2014.01); H01L 23/049 (2006.01); H01L 21/48 (2006.01); H01L 23/373 (2006.01);
U.S. Cl.
CPC ...
B23K 26/22 (2013.01); B23K 26/037 (2015.10); B23K 26/0622 (2015.10); B23K 26/211 (2015.10); B23K 26/32 (2013.01); H01L 21/4846 (2013.01); H01L 23/049 (2013.01); H01L 24/32 (2013.01); H01L 24/75 (2013.01); H01L 24/83 (2013.01); B23K 2201/34 (2013.01); B23K 2201/42 (2013.01); B23K 2203/08 (2013.01); B23K 2203/10 (2013.01); B23K 2203/12 (2013.01); H01L 23/3735 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/7555 (2013.01); H01L 2224/75261 (2013.01); H01L 2224/83224 (2013.01); H01L 2224/83801 (2013.01); H01L 2224/83895 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01046 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/181 (2013.01); H01L 2924/40102 (2013.01);
Abstract
In a laser welding method, a gap between first and second members to be welded is made at most 300 μm by pressing the second member against the first member with claws that are pressing parts of a laser welding jig, and the second member to be welded at a place between the claws is irradiated by laser light to laser-weld the first member and the second member. In a semiconductor device, the gap between the first member and the second member at the portion of laser-welding is at most 300 μm.