The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2016

Filed:

May. 01, 2015
Applicant:

Nanoplus Nanosystems and Technologies Gmbh, Gerbrunn, DE;

Inventors:

Johannes Koeth, Gerbrunn, DE;

Lars Nähle, Obernbreit, DE;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/34 (2006.01); H01S 5/20 (2006.01); H01S 5/10 (2006.01); H01S 5/065 (2006.01); H01S 5/22 (2006.01); H01S 5/12 (2006.01);
U.S. Cl.
CPC ...
H01S 5/3402 (2013.01); H01S 5/065 (2013.01); H01S 5/10 (2013.01); H01S 5/1237 (2013.01); H01S 5/2018 (2013.01); H01S 5/22 (2013.01); H01S 5/1231 (2013.01); H01S 5/2215 (2013.01); H01S 2301/176 (2013.01);
Abstract

Embodiments relate to a semiconductor laser having a multilayer structure including a ridge and two material removal areas adjacent to the ridge on either side, the multilayer structure being arranged on a substrate and a layer expansion plane being defined by a surface of the substrate, the ridge having at least one active region and at least the active region being spatially limited by passages between the ridge and the material removal areas in one dimension of the layer expansion plane, the active region having a layer structure for forming an interband cascade laser.


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