The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2016
Filed:
Nov. 30, 2012
Applicant:
Gwangju Institute of Science and Technology, Gwangju, KR;
Inventors:
Assignee:
GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY, Gwangju, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/183 (2006.01); H01S 5/187 (2006.01); H01L 33/10 (2010.01);
U.S. Cl.
CPC ...
H01S 5/187 (2013.01); H01L 33/105 (2013.01); H01S 5/18341 (2013.01); H01S 5/18361 (2013.01); H01S 5/18377 (2013.01); H01L 33/10 (2013.01); H01S 5/1833 (2013.01);
Abstract
The present invention relates to a silicon DBR structure-integrated light device, and a preparation method thereof, and more specifically, to a silicon DBR structure-integrated light device or vertical cavity light emitting diode, and a preparation method thereof, enabling preparation by a small number of layers and capable of reducing process time and costs due to a large contrast in refractive index of a silicon DBR structure formed by depositing silicon in a slanted or vertical manner.