The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9397285 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 19, 2016

Filed:

Apr. 19, 2013
Applicant:

Ecole Polytechnique Federale DE Lausanne (Epfl), Lausanne, CH;

Inventors:

Sebastian Thimotee Bartsch, Lausanne, CH;

Mihai Adrian Ionescu, Ecublens, CH;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 41/09 (2006.01); H01L 41/113 (2006.01); H01H 59/00 (2006.01); B82Y 15/00 (2011.01); H03H 9/02 (2006.01); H03H 9/24 (2006.01); B81B 3/00 (2006.01);
U.S. Cl.
CPC ...
H01L 41/0966 (2013.01); B81B 3/0021 (2013.01); B82Y 15/00 (2013.01); H01H 59/0009 (2013.01); H01L 41/0933 (2013.01); H01L 41/1134 (2013.01); H03H 9/02259 (2013.01); H03H 9/24 (2013.01); H03H 9/2463 (2013.01); B81B 2201/01 (2013.01); B81B 2201/0235 (2013.01); B81B 2201/0242 (2013.01); B81B 2201/0264 (2013.01); B81B 2201/0271 (2013.01); B81B 2201/0278 (2013.01); H03H 2009/02314 (2013.01);
Abstract

A junctionless Nano-Electro-Mechanical (NEM) resonator, comprising a highly doped conductive channel connecting a drain region and a source region; the conduction channel region is movable and the overall structure is fixed at least at these two ends placed on acting the source and drain regions, respectively; at least one fixed gate electrode arranged to control a depletion charge in the highly doped conductive channel thereby modulating dimensions of a cross-section of the highly doped conductive channel. A dimension of the cross-section in the direction of an electrical field that is oriented from the fixed gate electrode to the highly doped conductive channel, is designed in such a way that it can be reduced under the effect of the depletion charge such that a full depletion in the highly doped conductive channel is achievable with the control of the fixed gate electrode.


Find Patent Forward Citations

Bartsch, Sebastian. (2016). Junctionless nano-electro-mechanical resonant transistor (U.S. Patent No. 9397285). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9397285

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