The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2016
Filed:
Dec. 29, 2014
Applicant:
Industrial Technology Research Institute, Hsinchu, TW;
Inventors:
Assignee:
Industrial Technology Research Institute, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/64 (2010.01); H01L 33/04 (2010.01); H01L 33/12 (2010.01); H01L 33/22 (2010.01); H01L 33/20 (2010.01); H01L 33/02 (2010.01); H01L 33/06 (2010.01);
U.S. Cl.
CPC ...
H01L 33/642 (2013.01); H01L 33/002 (2013.01); H01L 33/04 (2013.01); H01L 33/12 (2013.01); H01L 33/22 (2013.01); H01L 33/007 (2013.01); H01L 33/025 (2013.01); H01L 33/06 (2013.01); H01L 33/20 (2013.01); Y10T 428/24562 (2015.01);
Abstract
A carrier for carrying a semiconductor layer having a growth surface and at least one nano-patterned structure on the growth surface is provided. The at least one nano-patterned structure on the growth surface of the carrier has a plurality of mesas, a recess is formed between two adjacent mesas, in which a depth of the recess ranges from 10 nm to 500 nm, and a dimension of the mesa ranges from 10 nm to 800 nm.