The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2016
Filed:
Feb. 14, 2013
Applicant:
Osram Opto Semiconductors Gmbh, Regensburg, DE;
Inventors:
Britta Göötz, Regensburg, DE;
Jürgen Moosburger, Regensburg, DE;
Andreas Plöβl, Regensburg, DE;
Matthias Sabathil, Regensburg, DE;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/64 (2010.01); H01L 33/00 (2010.01); C23C 24/04 (2006.01); C25D 7/12 (2006.01); H01L 33/46 (2010.01);
U.S. Cl.
CPC ...
H01L 33/641 (2013.01); C23C 24/04 (2013.01); C25D 7/12 (2013.01); H01L 33/0079 (2013.01); H01L 33/46 (2013.01); H01L 33/644 (2013.01); H01L 2924/0002 (2013.01); H01L 2933/005 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0075 (2013.01);
Abstract
A method of producing an optoelectronic semiconductor chip includes growing an optoelectronic semiconductor layer sequence on a growth substrate, forming an electrically insulating layer on a side of the optoelectronic semiconductor layer sequence facing away from the growth substrate by depositing particles of an electrically insulating material by an aerosol deposition method, and at least partly removing the growth substrate after forming the electrically insulating layer.