The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2016

Filed:

Jul. 21, 2009
Applicants:

Stephan Lutgen, Regensburg, DE;

Christoph Eichler, Tegernheim, DE;

Marc Schillgalies, Berlin, DE;

Desiree Queren, Neutraubling, DE;

Inventors:

Stephan Lutgen, Regensburg, DE;

Christoph Eichler, Tegernheim, DE;

Marc Schillgalies, Berlin, DE;

Desiree Queren, Neutraubling, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/24 (2010.01); H01L 21/02 (2006.01); H01S 5/223 (2006.01); H01L 33/48 (2010.01); H01L 31/0236 (2006.01); H01L 33/62 (2010.01); H01S 5/042 (2006.01); H01S 5/20 (2006.01); H01S 5/24 (2006.01); H01S 5/32 (2006.01);
U.S. Cl.
CPC ...
H01L 33/24 (2013.01); H01L 21/0237 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 21/02494 (2013.01); H01L 21/02587 (2013.01); H01L 33/007 (2013.01); H01S 5/2231 (2013.01); H01L 31/0236 (2013.01); H01L 33/486 (2013.01); H01L 33/62 (2013.01); H01L 2924/0002 (2013.01); H01S 5/0421 (2013.01); H01S 5/2009 (2013.01); H01S 5/24 (2013.01); H01S 5/3201 (2013.01); H01S 5/3211 (2013.01); H01S 5/3213 (2013.01); H01S 5/3215 (2013.01); H01S 2301/18 (2013.01); H01S 2304/12 (2013.01);
Abstract

An optoelectronic semiconductor chip () is herein described which comprises a non-planar growth layer (), which contains at least one first nitride compound semiconductor material, and an active zone (), which contains at least one second nitride compound semiconductor material and is arranged on the growth layer (), and a top layer (), which is arranged on the active zone (), the growth layer () comprising structure elements () at a growth surface () facing the active zone ().


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