The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2016

Filed:

Apr. 14, 2015
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Laurent Mollard, Claix, FR;

Guillaume Bourgeois, Grenoble, FR;

Gerard Destefanis, Saint-Egreve, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0296 (2006.01); H01L 27/144 (2006.01); H01L 31/103 (2006.01); H01L 31/18 (2006.01); H01L 31/0352 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02966 (2013.01); H01L 27/1443 (2013.01); H01L 27/1446 (2013.01); H01L 31/02963 (2013.01); H01L 31/03529 (2013.01); H01L 31/1032 (2013.01); H01L 31/1832 (2013.01);
Abstract

A photodiodes array includes a useful layer made of CdHgTe; first doped zones each forming a PN junction with a second doped zone surrounding the first doped zones. The array includes regions located between two PN junctions, with a cadmium concentration gradient decreasing from the upper face to the lower face of the useful layer. A method of making such a photodiodes array includes producing, on the upper face of the useful layer, of a structured layer with at least one through opening, and with a cadmium concentration higher than the cadmium concentration in the useful layer; annealing the useful layer covered by the structured layer, with diffusion of cadmium atoms of the structured layer, from the structured layer to the useful layer; producing at least two PN junctions in the useful layer.


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