The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2016
Filed:
Jul. 23, 2014
Sifotonics Technologies Co., Ltd., Woburn, MA (US);
Tuo Shi, Beijing, CN;
Mengyuan Huang, Beijing, CN;
Pengfei Cai, Beijing, CN;
Su Li, Beijing, CN;
Ching-yin Hong, Lexington, MA (US);
Wang Chen, Beijing, CN;
Liangbo Wang, Beijing, CN;
Dong Pan, Andover, MA (US);
SIFOTONICS TECHNOLOGIES CO., LTD., Woburn, MA (US);
Abstract
Various embodiments of a germanium-on-silicon (Ge—Si) avalanche photodiode are provided. In one aspect, the Ge—Si avalanche photodiode utilizes a silicon carrier-energy-relaxation layer to reduce the energy of holes drifting into absorption layer where the absorption material has lower ionization threshold, thereby suppressing multiplication noise and increasing the gain-bandwidth product of the avalanche photodiode.