The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2016
Filed:
Jun. 02, 2010
Ronghua Zhu, Chandler, AZ (US);
Vishnu Khemka, Phoenix, AZ (US);
Amitava Bose, Tempe, AZ (US);
Todd C. Roggenbauer, Chandler, AZ (US);
Ronghua Zhu, Chandler, AZ (US);
Vishnu Khemka, Phoenix, AZ (US);
Amitava Bose, Tempe, AZ (US);
Todd C. Roggenbauer, Chandler, AZ (US);
North Star Innovations Inc., Costa Mesa, CA (US);
Abstract
A semiconductor process and apparatus provide a high voltage deep trench capacitor structure () that is integrated in an integrated circuit, alone or in alignment with a fringe capacitor (). The deep trench capacitor structure is constructed from a first capacitor plate () that is formed from a doped n-type SOI semiconductor layer (e.g.,-). The second capacitor plate () is formed from a doped p-type polysilicon layer () that is tied to the underlying substrate ().