The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2016
Filed:
Dec. 13, 2013
Applicant:
Boe Technology Group Co., Ltd., Beijing, CN;
Inventors:
Chunsheng Jiang, Beijing, CN;
Jingfei Fang, Beijing, CN;
Assignee:
BOE TECHNOLOGY GROUP CO., LTD, Beijing, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 21/02178 (2013.01); H01L 21/02244 (2013.01); H01L 21/02565 (2013.01); H01L 27/1225 (2013.01); H01L 29/66969 (2013.01);
Abstract
Embodiments of the invention provide a thin film transistor, a method of manufacturing the same, an array substrate comprising the thin film transistor and a display device. The method of manufacturing the thin film transistor comprises steps of forming a gate electrode (), a gate insulating layer (), an oxide active layer (), a source electrode () and a drain electrode () on a substrate (). After forming the oxide active layer (), the method further comprises a step of forming an etch barrier layer () of a metal oxide on the oxide active layer ().