The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2016
Filed:
Aug. 24, 2014
Chunghwa Picture Tubes, Ltd., Taoyuan, TW;
Chin-Hai Huang, Taoyuan County, TW;
Chieh-Wei Feng, Taoyuan County, TW;
Szu-Chi Huang, Changhua County, TW;
Kune-Yu Lai, New Taipei, TW;
Yen-Yu Huang, Taoyuan County, TW;
Chunghwa Picture Tubes, LTD., Taoyuan, TW;
Abstract
A thin film transistor disposed on a substrate is provided. The thin film transistor includes a channel, a gate, a source, a drain and an etching stop layer. The channel is disposed above the substrate and is located between the etching stop layer and the source. The gate is disposed on the substrate and overlapped with the channel. The source is disposed between the channel and the substrate and electrically connected to the channel. The channel is disposed between the drain and the substrate. The etching stop layer is disposed between the drain and the channel and has a first through hole exposing a portion of the channel. The drain is filled in the first through hole of the etching stop layer and is electrically connected to the channel. The drain covers the channel completely.