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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9397185 B1

PDFFull Text
Date of Patent:
Jul. 19, 2016

Filed:

Dec. 02, 2013

Semiconductor device

Applicant:

Rohm Co., Ltd., Kyoto-shi, Kyoto, JP;

Inventors:

Heiji Watanabe, Suita, JP;

Takuji Hosoi, Suita, JP;

Takayoshi Shimura, Suita, JP;

Ryota Nakamura, Kyoto, JP;

Yuki Nakano, Kyoto, JP;

Shuhei Mitani, Kyoto, JP;

Takashi Nakamura, Kyoto, JP;

Hirokazu Asahara, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:

Hamre, Schumann, Mueller & Larson, P.C.

Primary Examiner:

Whitney T Moore

Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 29/78 (2006.01); H01L 29/49 (2006.01); H01L 29/423 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/513 (2013.01); H01L 29/1602 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/4236 (2013.01); H01L 29/495 (2013.01); H01L 29/4916 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01); H01L 29/7802 (2013.01); H01L 29/7813 (2013.01); H01L 29/41766 (2013.01);
Abstract

A semiconductor device according to the present invention has a MIS structure that includes a semiconductor layer, a gate insulating film in contact with the semiconductor layer, and a gate electrode formed on the gate insulating film, and the gate insulating film includes an AlON layer with a nitrogen composition of 5% to 40%. A semiconductor device is thereby provided with which electron trapping in the gate insulating film can be reduced and shifting of a threshold voltage Vcan be suppressed.

Find Patent Forward Citations

Watanabe, Heiji. (2016). Semiconductor device (U.S. Patent No. 9397185). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9397185

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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