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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9397174 B1

PDFFull Text
Date of Patent:
Jul. 19, 2016

Filed:

Oct. 17, 2014

Self-aligned gate electrode diffusion barriers

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

John J. Ellis-Monaghan, Grand Isle, VT (US);

Jeffrey P. Gambino, Westford, VT (US);

Russell T. Herrin, Essex Junction, VT (US);

Laura J. Schutz, Burlington, VT (US);

Steven M. Shank, Jericho, VT (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:

Michael Lestrange

Andrew M. Calderon

Roberts Mlotkowski Safran & Cole, P.C.

Primary Examiner:

Eric Ward

Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 29/40 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/408 (2013.01); H01L 21/8238 (2013.01); H01L 21/823842 (2013.01); H01L 21/823871 (2013.01); H01L 27/092 (2013.01);
Abstract

A structure that provides a diffusion barrier between two doped regions. The structure includes a diffusion barrier including a semiconductor layer comprising a first doped region and a second doped region; and a diffusion barrier separating the first doped region and the second doped region, wherein the diffusion barrier comprises a doped portion and a notch above the doped portion.

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Ellis-Monaghan, John. (2016). Self-aligned gate electrode diffusion barriers (U.S. Patent No. 9397174). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9397174

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