The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2016
Filed:
Jan. 23, 2012
Primit Parikh, Goleta, CA (US);
Yifeng Wu, Goleta, CA (US);
Primit Parikh, Goleta, CA (US);
Yifeng Wu, Goleta, CA (US);
CREE, INC., Goleta, CA (US);
Abstract
A transistor structure comprising an active semiconductor layer with metal source and drain contacts formed in electrical contact with the active layer. A gate contact is formed between the source and drain contacts for modulating electric fields within the active layer. A spacer layer is formed above the active layer and a conductive field plate formed above the spacer layer, extending a distance Lfrom the edge of the gate contact toward the drain contact. The field plate is electrically connected to the gate contact and provides a reduction in the peak operational electric field.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile