The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2016
Filed:
Jul. 14, 2015
Applicant:
Sumco Corporation, Minato-ku, Tokyo, JP;
Inventor:
Takeshi Kadono, Minato-ku, JP;
Assignee:
SUMCO Corporation, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/36 (2006.01); H01L 21/02 (2006.01); H01L 27/146 (2006.01); H01L 29/167 (2006.01);
U.S. Cl.
CPC ...
H01L 29/36 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/02576 (2013.01); H01L 21/02631 (2013.01); H01L 21/02658 (2013.01); H01L 27/14687 (2013.01); H01L 29/167 (2013.01);
Abstract
Provided is a semiconductor epitaxial wafer with reduced metal contamination achieved by higher gettering capability. The semiconductor epitaxial wafer includes a silicon wafer including COPs; a modifying layer formed from a certain element in the silicon wafer, in a surface portion of the silicon wafer; and an epitaxial layer on the modifying layer, wherein the full width half maximum of a concentration profile of the certain element in the depth direction of the modifying layer is 100 nm or less.