The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2016
Filed:
Feb. 23, 2015
Seiko Epson Corporation, Tokyo, JP;
Tomoyuki Furuhata, Suwa, JP;
SEIKO EPSON CORPORATION, Tokyo, JP;
Abstract
A semiconductor device according to the invention includes an epitaxial layer of a first conductivity type, a first well of a second conductivity type to which a first potential is applied, a second well of the second conductivity type to which a second potential that differs from the first potential is applied, a third well of the first conductivity type provided in the epitaxial layer between the first well and the second well, a first impurity region of the first conductivity type provided in the epitaxial layer under the first well, a first MOS transistor provided in the first well, a second MOS transistor provided in the second well, and a third MOS transistor provided in the third well, the first impurity region having a higher impurity concentration than the epitaxial layer.