The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2016

Filed:

Oct. 01, 2014
Applicants:

Stmicroelectronics SA, Montrouge, FR;

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Patrick Gros D'aillon, Biviers, FR;

Michel Marty, Saint Paul d Varces, FR;

Assignee:

STMicroelectronics SA, Montrouge, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); G02B 5/20 (2006.01); G02B 5/28 (2006.01); H04N 9/04 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14621 (2013.01); G02B 5/20 (2013.01); G02B 5/281 (2013.01); G02B 5/286 (2013.01); G02B 5/288 (2013.01); H01L 27/14685 (2013.01); H04N 9/045 (2013.01);
Abstract

A stack of layers defines a filter and is formed by copper on hydrogenated silicon nitride supported by a carrier. The filter includes a layer of hydrogenated silicon nitride, a layer of silicon oxide on the layer of hydrogenated silicon nitride and a layer of copper on the layer of silicon oxide. The layer of hydrogenated silicon nitride may have, in a vicinity of its upper side, a ratio of a number of silicon atoms per cubic centimeter to a number of nitrogen atoms per cubic centimeter lower than 0.8 (or even lower than 0.6), with a number of silicon-hydrogen bonds smaller than or equal to 6×10bonds per cubic centimeter (or even smaller than 0.5×10bonds per cubic centimeter). The filter further includes an additional layer of copper between the layer of hydrogenated silicon nitride and the carrier.


Find Patent Forward Citations

Loading…