The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2016

Filed:

Dec. 03, 2014
Applicant:

Apple Inc., Cupertino, CA (US);

Inventors:

Jae Won Choi, Cupertino, CA (US);

MinKyu Kim, Cupertino, CA (US);

Shih Chang Chang, Cupertino, CA (US);

Young Bae Park, San Jose, CA (US);

John Z. Zhong, Cupertino, CA (US);

Assignee:

Apple Inc., Cupertino, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1251 (2013.01); H01L 27/1222 (2013.01); H01L 27/1225 (2013.01); H01L 27/1255 (2013.01); H01L 27/3211 (2013.01); H01L 27/3248 (2013.01); H01L 27/3276 (2013.01);
Abstract

An organic light-emitting diode display may have an array of pixels. Each pixel may have an organic light-emitting diode and thin-film transistor circuitry that controls current flow through the organic light-emitting diode. The thin-film transistor circuitry may include silicon thin-film transistors and semiconducting-oxide thin-film transistors. Double gate transistor structures may be formed in the transistors of the thin-film transistor circuitry. A double gate transistor may have a semiconductor layer sandwiched between first and second dielectric layers. The first dielectric layer may be interposed between an upper gate and the semiconductor layer and the second dielectric layer may be interposed between a lower gate and the semiconductor layer. Capacitor structures may be formed from the layers of metal used in forming the upper and lower gates and other conductive structures.


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