The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2016
Filed:
Aug. 12, 2014
Qualcomm Incorporated, San Diego, CA (US);
HariKrishna Chintarlapalli Reddy, Bangalore, IN;
Jay Madhukar Shah, Bangalore, IN;
Ananth Haliyur Gopalakrishna, Bangalore, IN;
QUALCOMM INCORPORATED, San Diego, CA (US);
Abstract
A MOS device includes a first FinFET having a first transistor source, drain, gate, and set of fins, and includes a second FinFET having a second transistor source, drain, gate, and set of fins. The MOS device further includes a gate interconnect extending linearly to form and to connect together the first and second transistor gates. The MOS device further includes a first interconnect on a first side of the gate interconnect that connects together the set of first transistor fins at the first transistor drain and the set of second transistor fins at the second transistor source, a second interconnect on a second side of the gate interconnect that connects together the set of first transistor fins at the first transistor source, and a third interconnect on the second side of the gate interconnect that connects together the set of second transistor fins at the second transistor drain.