The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2016
Filed:
Jul. 14, 2014
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 27/07 (2006.01); H01L 21/74 (2006.01); H01L 49/02 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/94 (2006.01); H01L 21/321 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0733 (2013.01); H01L 21/32105 (2013.01); H01L 21/743 (2013.01); H01L 28/40 (2013.01); H01L 29/407 (2013.01); H01L 29/41766 (2013.01); H01L 29/66712 (2013.01); H01L 29/66734 (2013.01); H01L 29/7803 (2013.01); H01L 29/7804 (2013.01); H01L 29/7809 (2013.01); H01L 29/7813 (2013.01); H01L 29/7816 (2013.01); H01L 29/945 (2013.01); H01L 29/0696 (2013.01);
Abstract
A semiconductor component arrangement method includes producing a trench transistor structure including at least one trench disposed in the semiconductor body and at least one gate electrode disposed in the at least one trench. The method also includes producing a capacitor structure comprising an electrode structure disposed in at least one further trench, the electrode structure comprising at least one electrode. The gate electrode and the at least one electrode of the electrode structure are produced by common process steps.